Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.
Identifieur interne : 000133 ( Main/Exploration ); précédent : 000132; suivant : 000134Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.
Auteurs : RBID : pubmed:24643320Abstract
Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.
DOI: 10.1039/c3nr05882d
PubMed: 24643320
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Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.</title>
<author><name sortKey="Wan, Chang Jin" uniqKey="Wan C">Chang Jin Wan</name>
<affiliation wicri:level="1"><nlm:affiliation>Nanjing University, School of Electronic Science & Engineering, Nanjing 210093, Jiangsu, People's Republic of China. wanqing@nju.edu.cn yshi@nju.edu.cn.</nlm:affiliation>
<country xml:lang="fr">République populaire de Chine</country>
<wicri:regionArea>Nanjing University, School of Electronic Science & Engineering, Nanjing 210093, Jiangsu</wicri:regionArea>
</affiliation>
</author>
<author><name sortKey="Zhu, Li Qiang" uniqKey="Zhu L">Li Qiang Zhu</name>
</author>
<author><name sortKey="Zhou, Ju Mei" uniqKey="Zhou J">Ju Mei Zhou</name>
</author>
<author><name sortKey="Shi, Yi" uniqKey="Shi Y">Yi Shi</name>
</author>
<author><name sortKey="Wan, Qing" uniqKey="Wan Q">Qing Wan</name>
</author>
</titleStmt>
<publicationStmt><date when="2014">2014</date>
<idno type="doi">10.1039/c3nr05882d</idno>
<idno type="RBID">pubmed:24643320</idno>
<idno type="pmid">24643320</idno>
<idno type="wicri:Area/Main/Corpus">000113</idno>
<idno type="wicri:Area/Main/Curation">000113</idno>
<idno type="wicri:Area/Main/Exploration">000133</idno>
</publicationStmt>
</fileDesc>
<profileDesc><textClass></textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.</div>
</front>
</TEI>
<pubmed><MedlineCitation Owner="NLM" Status="In-Data-Review"><PMID Version="1">24643320</PMID>
<DateCreated><Year>2014</Year>
<Month>04</Month>
<Day>11</Day>
</DateCreated>
<Article PubModel="Print"><Journal><ISSN IssnType="Electronic">2040-3372</ISSN>
<JournalIssue CitedMedium="Internet"><Volume>6</Volume>
<Issue>9</Issue>
<PubDate><Year>2014</Year>
<Month>Apr</Month>
<Day>10</Day>
</PubDate>
</JournalIssue>
<Title>Nanoscale</Title>
<ISOAbbreviation>Nanoscale</ISOAbbreviation>
</Journal>
<ArticleTitle>Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.</ArticleTitle>
<Pagination><MedlinePgn>4491-7</MedlinePgn>
</Pagination>
<ELocationID EIdType="doi" ValidYN="Y">10.1039/c3nr05882d</ELocationID>
<Abstract><AbstractText>Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.</AbstractText>
</Abstract>
<AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Wan</LastName>
<ForeName>Chang Jin</ForeName>
<Initials>CJ</Initials>
<Affiliation>Nanjing University, School of Electronic Science & Engineering, Nanjing 210093, Jiangsu, People's Republic of China. wanqing@nju.edu.cn yshi@nju.edu.cn.</Affiliation>
</Author>
<Author ValidYN="Y"><LastName>Zhu</LastName>
<ForeName>Li Qiang</ForeName>
<Initials>LQ</Initials>
</Author>
<Author ValidYN="Y"><LastName>Zhou</LastName>
<ForeName>Ju Mei</ForeName>
<Initials>JM</Initials>
</Author>
<Author ValidYN="Y"><LastName>Shi</LastName>
<ForeName>Yi</ForeName>
<Initials>Y</Initials>
</Author>
<Author ValidYN="Y"><LastName>Wan</LastName>
<ForeName>Qing</ForeName>
<Initials>Q</Initials>
</Author>
</AuthorList>
<Language>eng</Language>
<PublicationTypeList><PublicationType>Journal Article</PublicationType>
</PublicationTypeList>
</Article>
<MedlineJournalInfo><Country>England</Country>
<MedlineTA>Nanoscale</MedlineTA>
<NlmUniqueID>101525249</NlmUniqueID>
<ISSNLinking>2040-3364</ISSNLinking>
</MedlineJournalInfo>
<CitationSubset>IM</CitationSubset>
</MedlineCitation>
<PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2014</Year>
<Month>3</Month>
<Day>20</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
<PubMedPubDate PubStatus="pubmed"><Year>2014</Year>
<Month>3</Month>
<Day>20</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
<PubMedPubDate PubStatus="medline"><Year>2014</Year>
<Month>3</Month>
<Day>20</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
</History>
<PublicationStatus>ppublish</PublicationStatus>
<ArticleIdList><ArticleId IdType="doi">10.1039/c3nr05882d</ArticleId>
<ArticleId IdType="pubmed">24643320</ArticleId>
</ArticleIdList>
</PubmedData>
</pubmed>
</record>
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